| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a simple structure and has materialized a high cooling efficiency for a semiconductor device chip. SOLUTION: A highly thermally conductive insulating film 3 is formed on a lead frame 1, a Peltier effect element 5 is formed on the insulating film 3, a thermally conductive insulating film 4 is further formed on the Peltier effect element 5, and an LSI chip 6 is mounted on top of it. COPYRIGHT: (C)2004,JPO |
