发明名称 |
SUSCEPTOR |
摘要 |
The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide. |
申请公布号 |
EP1790757(A4) |
申请公布日期 |
2007.10.31 |
申请号 |
EP20050765225 |
申请日期 |
2005.07.01 |
申请人 |
TOYO TANSO CO., LTD. |
发明人 |
FUJITA, ICHIRO;FUJIWARA, HIROKAZU |
分类号 |
C23C16/32;C23C16/44;C23C16/458;C30B25/12;C30B29/36;C30B31/14;G01N23/225;H01L21/205;H01L21/68 |
主分类号 |
C23C16/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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