Production of silicon nitride layer with high intrinsic compressive bracing, comprises forming transistor element on substrate with gate electrode structure, and forming silicon nitride materials in the proximity to the gate electrode

摘要

The production of a silicon nitride layer with high intrinsic compressive bracing, comprises forming a transistor element on a substrate with a gate electrode structure, forming a compressive bracing silicon nitride materials in the proximity to the gate electrode based on a plasma based silane containing deposition atmosphere, and controlling the amount of compressive bracing on the basis of height of high- and low frequency power. The height of the high- and low frequency power is varied to hold the intrinsic compressive bracing at 1.5-2.5 GPa. The production of a silicon nitride layer with high intrinsic compressive bracing, comprises forming a transistor element on a substrate with a gate electrode structure, forming a compressive bracing silicon nitride materials in the proximity to the gate electrode based on a plasma based silane containing deposition atmosphere, and controlling the amount of compressive bracing on the basis of height of high- and low frequency power. The height of the high- and low frequency power is varied to hold the intrinsic compressive bracing at 1.5-2.5 GPa. The low-frequency power is fed to the deposition atmosphere. The height of the low-frequency power is greater than the height of the high-frequency power. The substrate is held at a temperature of 400 [deg]C or lower. The deposition atmosphere has a pressure of 2.0-0.8 Torr. The formation of the silicon nitride materials comprises depositing a silicon nitride layer over the metal silicide region of the transistor, structuring the silicon nitride layer, in order to form a sidewall spacers in the gate electrode structure, forming a dielectric layer on the silicon nitride layer and structuring the dielectric layer by applying the silicon nitride layer as an etch-stopping layer. The deposition atmosphere is arranged on the basis of the high-frequency power and a low-frequency power.