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发明名称
FLASH MEMORY CELL HAVING BURIED FLOATING GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
摘要
申请公布号
EP1849188(A1)
申请公布日期
2007.10.31
申请号
EP20060703617
申请日期
2006.01.24
申请人
EXCEL SEMICONDUCTOR INC.
发明人
JANG, YOON SOO;PARK, KWANG;SONG, BOK NAM;CHOI, SEOUNK OUK;KIM, HAN HEUNG
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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