发明名称 |
Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging |
摘要 |
<p>A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. Alternatively, a non-insulating organic layer may be between the top electrode and the charge generating layer. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays. A voltage is applied to the top electrode. This voltage may be within the range of 500 V to 2,000 V.</p> |
申请公布号 |
EP1850388(A2) |
申请公布日期 |
2007.10.31 |
申请号 |
EP20070251764 |
申请日期 |
2007.04.26 |
申请人 |
HOLOGIC, INC. |
发明人 |
CHEUNG, LAWRENCE;BOGDANOVICH, SNEZANA;INGAL, ELENA;WILLIAMS, CORNELL L. |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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