| 摘要 |
For NAND flash devices, two specific bounds for the program time are defined in the data sheets: a typical program time, during which more than 50% of all pages are programmed, and a maximum program time. Reduction of the maximum program time to an effective program time is possible using the following method for writing to a flash memory, comprising the steps of specifying an effective program time (t PROG,eff ) that is between typical and maximum program time, writing first data (i) to the flash memory, after the effective program time (t PROG,eff ) checking if the programming cycle is finished,
if it is finished writing second data to the flash memory, and if it is not finished writing the at least second data (i+1) to a buffer memory (Page Buffer) and marking them as not to be overwritten, repeating the previous steps as long as further data are to be stored, determining a free location in a flash memory, and copying the at least second data from the buffer memory (Page Buffer) to the determined location in the flash memory.
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