| 摘要 |
A method for manufacturing a semiconductor device having a repair fuse is provided to shorten a process time and to reduce a manufacturing cost by performing a photo-masking process only once. A repair fuse is formed on a substrate(31). An interlayer dielectric(32) is formed on an entire structure including the repair fuse. A metal line for a pad is formed on the interlayer dielectric. The metal line has a stacked structure of a first metal layer and a second metal layer. A protective layer is formed on the entire structure including the metal line. A mask pattern(40) for a pad open part(41) and a fuse open part(42) is formed. The protective layer and the interlayer dielectric are etched on the second metal layer. The polymer is removed. The second metal layer is etched.
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