| 摘要 |
Page mode access for a non-volatile memory array is provided to read or write an array of non-volatile memory cells arranged in a plurality of logically vertical columns and a plurality of logically horizontal columns and at least one memory cell on the horizontal column in parallel. A two-dimensional array(10) of non-volatile memory elements(12) has a plurality of vertical columns and at least one horizontal column, and each memory element can store at least one bit. A selection circuit(14) selects a plurality of memory elements in the horizontal column at the same time, and can continue to select a plurality of memory elements uninterrupted by refresh cycle. An access circuit accesses the memory elements selected at the same time in the horizontal column.
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