NON-DASH NECK METHOD FOR SINGLE CRYSTAL SILICON GROWTH

摘要

A NON- DASH NECK METHOD OF PREPARING A SINGLE CRYSTAL SILICON ROD, PULLED IN ACCORDANCE WITH THE CZOCHRALSKI METHOD. THE PROCESS IS CHARACTERIZED IN THAT A LARGE DIAMETER, DISLOCATION- FREE SEED CRYSTAL IS ALLOWED TO THERMALLY EQUILIBRATE PRIOR TO INITIATION OF SILICON ROD GROWTH, IN ORDER TO AVOID THE INFORMATION OF DISLOCATIONS RESULTING FROM THERMAL SHOCK TO THE CRYSTAL. THE PROCESS IS FURTHERC HARACTERIZED IN THAT A RESISTANCE HEATER IS USED TO MELT THE LOWER TIP OF THE SEED CRYSTAL TO FORM A MOLTEN CAP BEFORE IT IS BROUGHT INTO CONTACT WITH THE MELT. THE PROCESS YIELDS A SINGLE CRYSTAL SILICON ROD HAVING A SHORT, LARGE DIAMETER NECK WHICH IS DISLOCATION- FREE, AND WHICH IS CAPABLE OF SUPPORTING A SILICON ROD WHICH WEIGHS AT LEAST ABOUT 100 KILOGRAMS DURING GROWTH AND SUBSEQUENT HANDLING.