| 摘要 |
<p>A phase change random access memory cell and a method for manufacturing the same are provided to maintain a stable state of information stored therein by separating a phase change material such as GeSbTe by using an insulating material such as SiOx. A phase change random access memory cell includes a lower electrode, a phase change layer mixed with a phase change material on the lower electrode, and an upper electrode formed on the phase change layer. The phase change material is separated into a constant size by using the phase change material. The phase change material of the phase change layer is formed of a chalcogenide material of one element which is selected from a group including Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, and O.</p> |
