FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A field effect transistor and a method for fabricating the same are provided to improve carrier mobility of an organic thin film transistor by orienting semiconductor organic molecules in a desired direction. A patterned gate electrode(13) is formed on a substrate(16). A gate insulating layer(17) is formed on the substrate and the gate electrode. A source electrode and a drain electrode are formed on the gate insulating layer. A region is formed between the source electrode and the drain electrode in order to form a channel. A first boundary between the region and one of the source electrode and the drain electrode is formed with a linear shape. A second boundary between the region and one of the source electrode and the drain electrode is formed with a non-linear shape. The second boundary has a continuous or a discontinuous structure. A boundary part of the second boundary has a plurality of recess parts. The surface of the region has hydrophilicity higher than other regions. The periphery of the region is formed with a member having water-repellency higher than the region. A solution including semiconductor organic molecules is supplied to the region and is dried.