SOLID-STATE IMAGE PICKUP DEVICE

摘要

There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion P m,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T 1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T 2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T 1 ; a discharging transistor T 3 for discharging the charges of the capacitive element C; and a selecting' transistor T 4 for selectively outputting a voltage value output from the amplifying transistor T 1 to a wiring L n .