Integrated circuit for storing data, has memory circuit with inverter circuits, where strengthening and/or weakening of transistors in corresponding inverter circuits is realized by change of channel lengths and breadths of transistors

摘要

The circuit has a programmable circuit unit (10) comprising a programmable unit (F) e.g. fuse, where a programming state of the unit (F) is analyzed repeatedly, and a memory circuit (20) for storing a state of memory dependent on a programming state of the programmable unit. The memory circuit has inverter circuits (21, 22), where strengthening and/or weakening of n-channel and p-channel transistors (N2, P2, N4, P3) in the corresponding inverter circuits is realized by change of channel lengths and breadths of the transistors. An independent claim is also included for a method for operating an integrated circuit.