| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to improve characteristics of a transistor by preventing the generation of a short channel effect. A gate electrode(13) is formed on a silicon substrate by using a gate insulating layer. A surface layer of the silicon substrate is dug by performing an etch process using the gate electrode as a mask. A mixed crystal layer is epitaxially grown on a surface of the dug part of the silicon substrate. In the epitaxial growth process, the mixed crystal layer includes silicon and atoms different from the silicon in a lattice constant in order to obtain an impurity having a concentration gradient indicating an increase of concentration from the silicon substrate to a surface of the mixed crystal layer.</p> |
