发明名称 DUAL EVAPORATION SPUTTERING SIMULTANEOUS DEPOSITION APPARATUS
摘要 An evaporation sputtering simultaneous deposition apparatus is provided to minimize influence between inert gas and evaporation gas by forming an evaporation path and an inert gas supply path separately. An evaporation sputtering simultaneous deposition apparatus includes a reaction chamber(10), a sputtering unit(100), an evaporation unit(200), a gas supply, and a filter(330). A substrate is provided inside the reaction chamber. The sputtering unit deposits metal material on the substrate. The evaporation unit evaporates and sprays the metal material on the substrate and is located apart from the gas supply. The gas supply provides the reaction chamber with inert gas for sputtering the metal material charged in the sputtering unit. The filter filters the inert gas using a reaction agent.
申请公布号 KR100772009(B1) 申请公布日期 2007.10.31
申请号 KR20060080440 申请日期 2006.08.24
申请人 KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE 发明人 KIM, HO SEOP;SONG, KYU JUNG;KIM, TAE HYUNG;OH, SANG SOO;HA, HONG SOO;HA, DONG WOO;KO, ROCK KIL
分类号 C23C14/00;C23C14/24;C23C14/34 主分类号 C23C14/00
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