| 摘要 |
<p>A non-volatile memory device is provided to increase an interference effect between cells by disposing a low-k dielectric in a region mostly adjacent to floating gates. Floating gates(34,35) of first and second memory cells are composed of a first portion and a second portion disposed on the first portion and having a width narrower than that of the first portion in a direction to which a control gate(37) extends, respectively. The first portion is disposed between isolation insulating layers(32) of strip shape, and an upper surface of the isolation insulating layer is flush with an upper surface of the first portion or is lower than it. A space between the first portions of the first and second memory cells is filled with a first dielectric, and a space between the second portions is filled with a second dielectric having dielectric constant higher that the first dielectric.</p> |
