发明名称 THICK FILM PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要 <p>A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.</p>
申请公布号 KR100771034(B1) 申请公布日期 2007.10.29
申请号 KR20067008087 申请日期 2006.04.26
申请人 发明人
分类号 G03F7/033;G03F7/40 主分类号 G03F7/033
代理机构 代理人
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