发明名称 |
WING GATE TRANSISTOR FOR INTEGRATED CIRCUITS |
摘要 |
<p>A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.</p> |
申请公布号 |
SG136147(A1) |
申请公布日期 |
2007.10.29 |
申请号 |
SG20070089410 |
申请日期 |
2005.03.17 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
PHUA TIMOTHY;CHOK TEE KHENG;LIANG-CHOO HSIA |
分类号 |
H01L21/28;H01L21/336;H01L21/338;H01L27/148;H01L29/423;H01L29/74;H01L29/76;H01L29/768;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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