发明名称 COMPONENTS HAVING A FILM STRUCTURE AND METHODS OF FORMING COMPONENTS HAVING A FILM STRUCTURE
摘要 <p>A method of forming a component having a film structure comprises thermally oxidising a first layer of a silicon substrate to form a compressive thermal oxidization silicon dioxide layer; and applying a layer comprising a nickel-titanium alloy to the first layer such that the first layer is located between the layer comprising a nickel- titanium alloy and the substrate. There is also disclosed a method of forming a component having a film structure comprising applying a first layer to a substrate to form an adhesive layer and applying a layer comprising a nickel-titanium alloy to the first layer such that the first layer is located between the layer comprising a nickel-titanium alloy and the substrate. There is further disclosed a component formed according to these methods and MEMS devices formed according to these methods.</p>
申请公布号 SG135993(A1) 申请公布日期 2007.10.29
申请号 SG20060017511 申请日期 2006.03.20
申请人 SONY CORPORATION 发明人 OKITA HIROYUKI;YEO CHING BIING;MIAO JIANMIN;CHEN XIAOFENG
分类号 (IPC1-7):B81B3/00;B32B15/00;B81B7/02;B81C1/00 主分类号 (IPC1-7):B81B3/00
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