NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME

摘要

A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is formed on the substrate, and has a source region(S), a drain region(D) having a shallower impurity injection region than the source region, and a channel region(C) formed between the source and drain regions. A first gate insulating layer(130) is formed on the semiconductor layer, and has regions corresponding to the source and drain regions thinner than a region corresponding to the channel region. A first gate electrode(140), a second gate insulating layer(150), and a second gate electrode(160) are formed on the first gate insulating layer.