METHOD FOR FORMING SOI MOSFET BY ANNEALING IN HIGH-PRESSURE HYDROGEN AMBIENT

摘要

A method of fabricating an SOI(Silicon-On-Insulator) MOSFET(Metal-Oxide-Silicon Field Effect Transistor) is provided to improve electric characteristics of a device by passivating a trap charge of front and back interfaces sufficiently. A buried oxide layer is deposited on a silicon substrate, and then a superficial silicon semiconductor on the buried oxide layer. The silicon semiconductor is implanted with impurity to form a source and a drain, and then a channel region is formed between the source and the drain. A SiO2 insulation layer and a conductive layer are formed on the source and drain so that a front interface of a gate insulation layer and a back interface of the buried oxide layer are formed.