| 摘要 |
FIELD: micro-electronics, namely, ensuring of reliability of a batch of bipolar transistors due to detection of potentially unreliable devices, possible use during production and during usage. ^ SUBSTANCE: method for detecting potentially unreliable bipolar transistors includes measuring low frequency noise of transistor, which is performed at two transitions emitter-base, collector-base at two current values, and decision of reliability of devices is made on basis of quality control criterion B, determined as , where I1, I2 - current power values, U2 ne1, U2 ne2 - square voltage of emitter-base transition noise with current power respectively for first and second values; U2 nc2 - square voltage of collector-base transition noise with current power for second value. ^ EFFECT: increased trustworthiness of method, simplification of method due to measurement of different transitions of one and the same transistor. |
