| 发明名称 |
SENSING ELEMENT OF INFRARED RADIATION DETECTOR |
| 摘要 |
FIELD: optoelectronics. ^ SUBSTANCE: proposed sensing element of infrared radiation detector made in the form of thin solid-solution film uses Cd1-xSnxS as solid-solution material, where x = 0.1 - 0.66 and its film thickness ranges between 0.3 and 0.7 mum. ^ EFFECT: enlarged range of detected radiation, facilitated manufacture. ^ 1 cl, 1 tbl |
| 申请公布号 |
RU2309486(C2) |
申请公布日期 |
2007.10.27 |
| 申请号 |
RU20050133562 |
申请日期 |
2005.10.31 |
| 申请人 |
GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "TAMBOVSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (GOU VPO TGTU) |
发明人 |
POLJAKOV EVGENIJ VLADISLAVOVICH;MINAEV ALEKSANDR MIKHAJLOVICH;BRUSENTSOV JURIJ ANATOL'EVICH;PRUCHKIN VLADIMIR ARKAD'EVICH;KUZ'MIN ALEKSANDR JUR'EVICH |
| 分类号 |
H01L31/08 |
主分类号 |
H01L31/08 |
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