发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING ASIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit having high performance, low power consumption, and a low cost and capable of reducing the time and risk of development, and to provide a method of manufacturing an ASIC device. <P>SOLUTION: The method of manufacturing the semiconductor integrated circuit by combining at least one standardized functional block and a newly developed custom functional block includes a step for forming a basic block chip that embodies the standardized functional block, a step for forming another custom block chip that embodies the custom functional block, and a step for coupling the basic block chip and the custom block chip. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007281487(A) 申请公布日期 2007.10.25
申请号 JP20070104015 申请日期 2007.04.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE YUN TAE;PARK JONG-WOO;HWANG SEON-WOOK
分类号 H01L21/82;H01L21/822;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/118 主分类号 H01L21/82
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