发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING ASIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit having high performance, low power consumption, and a low cost and capable of reducing the time and risk of development, and to provide a method of manufacturing an ASIC device. <P>SOLUTION: The method of manufacturing the semiconductor integrated circuit by combining at least one standardized functional block and a newly developed custom functional block includes a step for forming a basic block chip that embodies the standardized functional block, a step for forming another custom block chip that embodies the custom functional block, and a step for coupling the basic block chip and the custom block chip. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007281487(A) |
申请公布日期 |
2007.10.25 |
申请号 |
JP20070104015 |
申请日期 |
2007.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE YUN TAE;PARK JONG-WOO;HWANG SEON-WOOK |
分类号 |
H01L21/82;H01L21/822;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/118 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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