| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a white light emitting device having high brightness. <P>SOLUTION: The semiconductor light emitting device includes a semiconductor light emitting chip including an active layer which emits light with first wavelength by current injection, and a light emitting layer which is adhered to the surface of the substrate of the semiconductor light emitting chip and emits light with second wavelength by being exited by the light with first wavelength. The light emitting layer is formed separately in a plurality of areas of 1/3 to 2/3 of the surface of the substrate, and the light emitting layer is interposed between a pair of n-type and p-type cladding layers each having a band gap larger than that of the light emitting layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
