| 摘要 |
PROBLEM TO BE SOLVED: To reduce kerf loss and a margin by further scaling down grains than a present grain size, and to improve manufacturing efficiency and maintain the quality of a wafer by improving the yield of the wafer. SOLUTION: A semiconductor ingot is sliced using abrasive grains within a range other than No.2000 or lower and No.3000 or more. In this case, in order to increase a compulsive force when the semiconductor is pressed on the wire, a slicing median velocity is set at a slicing velocity of not less than 415μm/min, and the semiconductor ingot is sliced. Specifically, when the diameter of the wire has a value lower than 0.14 mm and larger than 0.12 mm, the tensile load is set at a value lower than 2.3 kg/f and larger than 2.1 kg/f; and when the diameter of the wire has a value not more than 0.12 mm, the tensile load is set at a value not more than 2.1 kg/f. COPYRIGHT: (C)2008,JPO&INPIT |
