| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which, even if a nitride film is present near a transistor, enhanced diffusion of arsenic into a silicon dioxide film and enhanced diffusion of arsenic into a silicon substrate can be avoided and also deterioration of a tunnel oxide film will not be caused. SOLUTION: A silicon nitride film 13 which lacks an Si-H bond can be formed by effecting film-formation at a high temperature using SiH<SB>2</SB>Cl<SB>2</SB>as a raw material gas or using silicon tetrachloride as a raw material gas. Alternatively, an influence of the Si-H bond can be suppressed by performing a high-temperature process after once removing hydrogen in the nitride film by effecting film-formation of the nitride film at a low temperature and then annealing at a higher temperature than the film-formation temperature. COPYRIGHT: (C)2008,JPO&INPIT
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