| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which increase in resistance and flocculation of a nickel silicide film which is formed on gate electrodes, a source region and a drain region of a MISFET can be suppressed while hydrogen, moisture or the like included in an interlayer insulating film can be efficiently eliminated. SOLUTION: The nickel silicide film 16 is formed on the gate electrodes 6a and 6b, the source region and the drain region. After that, a silicon nitride film 17 is formed on a semiconductor substrate 1. Subsequently, spike annealing is applied to the semiconductor substrate 1. The spike annealing is performed by using a laser annealing device, for example, at temperatures between 700-1,300°C inclusive and for a heating time between 1μsec and 1 msec inclusive. COPYRIGHT: (C)2008,JPO&INPIT
|
