发明名称 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS
摘要 An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
申请公布号 US2007248131(A1) 申请公布日期 2007.10.25
申请号 US20060276712 申请日期 2006.03.10
申请人 BOTEZ DAN;XU DAPENG P;MAWST LUKE J 发明人 BOTEZ DAN;XU DAPENG P.;MAWST LUKE J.
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址