发明名称 METHOD OF REDUCING EDGE HEIGHT AT THE OVERLAP OF A LAYER DEPOSITED ON A STEPPED SUBSTRATE
摘要 A system and method for preparing a stepped substrate and an apparatus are disclosed. The method comprises depositing photoresist on a stepped substrate, removing a first portion of the photoresist, reflowing the remaining portion of the photoresist; and etching a portion of the reflowed remaining photoresist and a portion of the stepped substrate. The apparatus comprises a deposited photoresist layer on a stepped substrate, wherein a portion of the photoresist is removed, a reflowed portion of the remaining photoresist, an etched portion of the reflowed photoresist, and an etched portion of the stepped substrate. The system for preparing a stepped substrate comprises a first processing tool for depositing at a portion of photoresist on the stepped substrate, a second processing tool for removing at least a first portion of the photoresist, a third processing tool for reflowing at least a portion of the remaining portion of the photoresist, and a fourth processing tool for etching a portion of the reflowed photoresist and a portion of the stepped substrate.
申请公布号 WO2007044542(A3) 申请公布日期 2007.10.25
申请号 WO2006US39195 申请日期 2006.10.06
申请人 LEE, MICHAEL, J.;LEE, BONG, HOON;ABELES, JOSEPH;CAPEWELL, DAVID, R.;DIMARCO, LOUIS;KWAKERNAAK, MARTIN;MOHSENI, HOOMAN;WHALEY, RALPH;YANG, LIYOU 发明人 ABELES, JOSEPH;CAPEWELL, DAVID, R.;DIMARCO, LOUIS;KWAKERNAAK, MARTIN;MOHSENI, HOOMAN;WHALEY, RALPH;YANG, LIYOU;MALEY, NAGENDRANATH
分类号 H01L21/302;H01L21/308;H01L21/312 主分类号 H01L21/302
代理机构 代理人
主权项
地址