| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable resistive element equipped with a low resistance PCMO (Pr<SB>0.7</SB>Ca<SB>0.3</SB>MnO<SB>3</SB>) film having an excellent rewriting resistance value and capable of realizing bipolar electrical pulse switching characteristics. <P>SOLUTION: The forming method of the variable resistive element comprises a preparation process for preparing a silicon substrate, a first process for depositing a lower electrode on the silicon substrate, a second process for depositing a thin film containing PCMO-platinum with PCMO as well as platinum mixed therein, and a third process for depositing an upper electrode on the thin film containing PCMO-platinum. Preferably in the second process, the thin film containing PCMO-platinum is formed as a multi-layered structure film by depositing the PCMO film and the platinum film alternately, or the thin film containing PCMO-platinum is formed through the co-deposit of PCMO and platinum. <P>COPYRIGHT: (C)2008,JPO&INPIT |
