| 摘要 |
PROBLEM TO BE SOLVED: To attain a higher joining intensity irrespective of material quality of joining surfaces when joining two objects to be joined. SOLUTION: Sputter-etching is conducted by radiating ion beams or atomic beams 8, 9 to the joining surfaces of both objects to be joined, for example, wafers W1, W2 in the vacuum condition under the room temperature. Simultaneously, a thin film is formed to the joining surface of at least one wafer W1 by sputtering a film forming material 7 with the ion beam or atomic beam. Thereafter, the joining surfaces are stacked with each other. COPYRIGHT: (C)2008,JPO&INPIT
|
