| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor capable of improving reliability of withstand voltage characteristics by preventing compositional change of a dielectric thin film, capable of improving ESD resistance, and capable of reducing size and thickness with excellent high frequency characteristics. SOLUTION: The highly reliable thin film capacitor is constituted by sequentially laminating on a substrate 1 made of an organic substance a first metallic thin film 2, a dielectric thin film 3 formed by sputtering, and a second metallic thin film 4. A metal oxide such as tantalum and manganese are used in the dielectric thin film 3, and valve metal such as aluminum is used in the first metallic thin film 2 to form an oxide coating 6 on the surface. Therefore, deterioration in withstand voltage characteristics due to the compositional change of the thin film 3 can be reduced, and also insulation of the oxide coating 6 can improve ESD resistance. COPYRIGHT: (C)2008,JPO&INPIT
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