| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving static breakdown voltage. SOLUTION: The semiconductor device 10 includes n insulation-separated transistor elements Tr which are sequentially connected in series between a first predetermined potential and a second predetermined potential. A gate terminal G1 of a first-stage transistor element Tr1 serves as an input terminal, gate terminals G2-Gn of transistor elements Tr2-Trn of respective stages except the first-stage transistor element Tr1 are sequentially connected between parallel RC elements connected in series between the first predetermined potential and the second predetermined potential, and an output is extracted from a terminal at the second predetermined potential of the n-stage transistor Trn. The transistor elements Tr are sequentially provided one by one to incorporate a higher- or lower-stage transistor element Tr in each field region F surrounded by a field isolation trench Zf. A potential of each field region F is specified to be of the same potential as that of one of three terminals of the transistor element Tr placed in the field region F. COPYRIGHT: (C)2008,JPO&INPIT
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