MOS SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A MOS semiconductor device includes a substrate having a first region with a Si(110) surface and a second region with a Si(100) surface, a p-channel MOSFET formed in the first region, and an n-channel MOSFET formed in the second region. The p-channel MOSFET including a first silicide layer formed on source/drain regions, and containing N atoms at an areal density of 8.5x10¹³ to 8.5x10¹⁴ cm^-2, and F atoms at an areal density of less than 5.0x10¹² cm^-2. The n-channel MOSFET including a second silicide layer formed on a source/drain regions, and containing F atoms at an areal density of not less than 5.0x10¹³ cm^-2.