发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
申请公布号 WO2007032197(A3) 申请公布日期 2007.10.25
申请号 WO2006JP316806 申请日期 2006.08.22
申请人 NISSAN MOTOR CO., LTD.;HAYASHI, TETSUYA;SHIMOIDA, YOSHIO;HOSHI, MASAKATSU;TANAKA, HIDEAKI;YAMAGAMI, SHIGEHARU 发明人 HAYASHI, TETSUYA;SHIMOIDA, YOSHIO;HOSHI, MASAKATSU;TANAKA, HIDEAKI;YAMAGAMI, SHIGEHARU
分类号 H01L29/861;H01L29/06;H01L29/24;H01L29/49 主分类号 H01L29/861
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