SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
申请公布号
WO2007032197(A3)
申请公布日期
2007.10.25
申请号
WO2006JP316806
申请日期
2006.08.22
申请人
NISSAN MOTOR CO., LTD.;HAYASHI, TETSUYA;SHIMOIDA, YOSHIO;HOSHI, MASAKATSU;TANAKA, HIDEAKI;YAMAGAMI, SHIGEHARU