| 摘要 |
PROBLEM TO BE SOLVED: To prevent the stepped cuttings of an interlayer insulating film and a wiring, the short circuit of the wiring or the like by burying a cavity under the eave of an electrode with an insulating film. SOLUTION: A semiconductor device has a contact electrode (an emitter electrode) 20 being connected to a conductive layer (an emitter cap layer 15) formed to a substrate 10 and having the eave 20a, the insulating film 31 buried to a cavity 28 under the eave 20a of the emitter electrode 20 and the interlayer insulating film 21 coating the emitter electrode 20, and the side section of the insulating film 31. The semiconductor device further has the wiring 27 connected to the emitter electrode 20 through a connecting hole 24 formed to the interlayer insulating film 21, while being disposed to the periphery of the electrode from the upper section of the emitter electrode 20 on the interlayer insulating film 21. COPYRIGHT: (C)2008,JPO&INPIT
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