METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of suppressing a void, while preventing damage on the surface of a semiconductor substrate when an element separation region is finely formed. SOLUTION: The semiconductor device manufacturing method includes: a process for forming an element separation groove 16 on the surface of the semiconductor substrate 11; a process for forming a thermally-oxidized film 17 on the surface of the element separation groove 16; a process for depositing a silicon oxynitride film 18 on the semiconductor substrate 11 via the thermally-oxidized film 17; a process for thermally processing the silicon oxynitride film 18 in an oxidization atmosphere; and a process for etching the upper part of the thermally-oxidized film 17 and the thermally processed silicon oxynitride film 18. COPYRIGHT: (C)2008,JPO&INPIT