| 摘要 |
PROBLEM TO BE SOLVED: To attain high integration of a ferroelectric memory cell without deteriorating disturbance characteristics of a ferroelectric capacitor. SOLUTION: A non-volatile semiconductor memory device comprises a ferroelectric capacitor 26 yielded by providing a ferroelectric film 21 between conductive material electrodes 22; a cell capacitor block 23 yielded by laminating a plurality of electrodes 22 of the ferroelectric capacitors 26 and ferroelectric films 21 in a vertical direction, with respect to a principal surface of a silicon substrate 11; a cell transistor 20 where the ferroelectric capacitor 26 is connected electrically in parallel with a drain electrode and a source electrode; a memory cell 19 composed of the ferroelectric capacitor 26 and the cell transistor 20; and a cell bock 13 to which a plurality of memory cells 19 are connected electrically in series. COPYRIGHT: (C)2008,JPO&INPIT
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