| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor element with low ON-resistance. SOLUTION: A gate electrode 8 is formed like a "ladder" above striped n-pillar layer 3 and p-pillar layer 4 exhibiting a super-junction structure. That is, the gate electrode 8 is constituted of a plurality of parts 8a periodically arranged in a pillar extending direction and a plurality of parts 8b connected between the adjacent parts 8a and periodically arranged in a pillar arranged direction. The part 8a is continuously extended in the pillar arranged direction, and the part 8b is offset by a half period for each region between the parts 8a in the pillar arranged direction. Thus, the super-junction structure can be microfabricated without excessively miniaturizing the gate electrode 8, thereby reducing the ON-resistance. COPYRIGHT: (C)2008,JPO&INPIT
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