| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching apparatus which can accurately etch a magnetic material, and an etching method by which the end point of etching of the magnetic material can be surely detected. SOLUTION: A helicon-wave plasma etching apparatus 1 is provided with a processing chamber 2 to etch a wafer 50 by plasma, wherein a stage 3 is provided. The stage 3 is provided with a magnetism detector 13 to detect magnetism, which is connected with a control unit 14. A bell jar 8 is provided above the processing chamber 2, and a helicon coil 9 and a magnetic field coil 11 are provided in its outer periphery. An RF power supply 10 is connected to helicon coil 9 to supply specified electric power. COPYRIGHT: (C)2008,JPO&INPIT
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