NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, METHOD OF MAKING THE SAME AND EPITAXIAL SUBSTRATE FOR NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride-based semiconductor substrate has a substrate formed of a nitride-based semiconductor crystal having a mixed crystal composition with three elements or more. The substrate has a diameter of not less than 25 mm, and a thermal resistivity in a range of 0.02 Kcm²/W to 0.5 Kcm²/W in its thickness direction.