METHOD OF FORMING FERROELECTRIC FILM BY SOL-GEL PROCESS AND METHOD OF MANUFACTURING CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric film having suppressed crystal orientation, exhibiting excellent electrical characteristics, free from crack and capable of easily forming the film thick in a sol-gel process.

SOLUTION: The ferroelectric film containing perovskite crystals and having ≤1,000Å film thickness is formed by applying a raw material solution containing an organic metallic compound of a structural metal element of the ferroelectric film, a stabilizer containing one or both of alkanol amine and β-diketone and a solvent on a silicon substrate, drying the applied raw material solution at a temperature higher than the boiling point of the solvent and lower than the boiling point of the stabilizer to form a dried gel film and sintering the dried gel film.

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