| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which is improved in pattern profile in ordinary exposure and liquid immersion lithography and excels in followability of water in liquid immersion lithography and a pattern forming method using the same, with respect to a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes and a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having a fluorine atom-containing repeating unit of a specific structure and being stable to an acid and insoluble in an alkali developer, and (D) a solvent. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
