| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for producing crystal silicon particles composed of polycrystalline silicon having high crystallinity which is crystallized stably with high efficiency by using gallium as p-type dopant. <P>SOLUTION: In atmosphere gas containing reactive gas composed of oxygen gas and/or nitrogen gas, crystal silicon particles 106 doped with a predetermined amount of gallium are heated to form a silicon compound layer containing the components of the reactive gas on the surface thereof. The crystal silicon particles 106 are then heated and the inner side of the silicon compound layer is fused and then solidified and single crystallized by lowering the temperature thus producing the crystal silicon particles 106. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
