| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including fine contact holes with less distortion. SOLUTION: The method for manufacturing semiconductor device is characterized in comprising the steps of forming a first mask layer 13 including a first linear aperture pattern 14 on a first interlayer insulating layer 10a, forming a second mask layer 15, on the first interlayer insulating layer 10a and the first mask layer 13, a plurality of linear second apertures 16 arranged orthogonally to the first linear aperture pattern 14 and a dummy aperture pattern 18 arranged proximity to a pattern leaving part 17 between adjacent second linear aperture patterns 16, and forming a contact hole 19 by etching the first interlayer insulating layer 10a provided at the lower part of the crossing portion of the first linear aperture pattern 14 and the second linear aperture pattern 16. COPYRIGHT: (C)2008,JPO&INPIT |
