| 摘要 |
PROBLEM TO BE SOLVED: To enable a stacked semiconductor device of POP structure to be improved in strength and reliability as a whole by enhancing the stacked semiconductors in connection strength between them. SOLUTION: A first semiconductor device 10 is equipped with a first semiconductor element 16 mounted on the front side of a first wiring board 11, first internal connection lands 13, and external connection lands 14 provided on the rear side of the wiring board 11. A second semiconductor device 20 is equipped with a second wiring board 21 arranged above the first wiring board 11, second semiconductor elements 25 and 27 mounted on the front side of the second wiring board 21, and second internal connection lands 23 provided on the rear side of the second wiring board 21. The first and the second semiconductor devices 10 and 20, are connected together through the intermediary of internal connection terminals 24, and a gap between the semiconductor devices 10 and 20 is filled up with reinforcing resin 30. COPYRIGHT: (C)2008,JPO&INPIT
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