发明名称 Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
摘要 An electronic device can include a substrate, an insulating layer, and a semiconductor layer overlying the insulating layer, wherein the insulating layer lies between the substrate and the semiconductor layer. In one aspect, a process of forming the electronic device can include patterning the semiconductor layer to define an opening extending to the insulating layer. The semiconductor layer has a sidewall and a surface, the surface is spaced apart from the insulating layer, and the sidewall extends from the surface towards the insulating layer. The process can also include forming a sidewall spacer adjacent to the sidewall, wherein the sidewall spacer lies within the opening and adjacent to the sidewall, and is spaced apart from the surface. In another aspect, the electronic device can include a field isolation region including the sidewall spacer.
申请公布号 US2007249127(A1) 申请公布日期 2007.10.25
申请号 US20060409882 申请日期 2006.04.24
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MORA RODE R.;ADAMS VANCE H.;KOLAGUNTA VENKAT R.;TURNER MICHAEL D.;VAN GOMPEL TONI D.
分类号 H01L21/336;H01L27/12 主分类号 H01L21/336
代理机构 代理人
主权项
地址