| 摘要 |
A non-volatile memory (NVM) cell fabricated on a semiconductor substrate, and including a floating gate electrode (which extends at least partially over all active regions of the NVM cell). The NVM cell also includes a PMOS access transistor located in a first n-type region, a PMOS control capacitor located in a second n-type region (separate from the first n-type region), and an NMOS programming transistor located in a p-type region. The floating gate electrode is a continuous electrode which extends over the active regions of the PMOS access transistor, the PMOS control capacitor and the NMOS programming transistor. Various array connections are provided for implementing arrays using this NVM cell. The PMOS access transistor and NMOS programming transistor can be replaced with an NMOS access transistor and a PMOS erase transistor, respectively, in an alternate embodiment.
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