OPTICALLY- INITIATED SILICON CARBIDE HIGH VOLTAGE SWITCH
摘要
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
申请公布号
WO2007120191(A2)
申请公布日期
2007.10.25
申请号
WO2006US41814
申请日期
2006.10.24
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;CAPORASO, GEORGE, J.;SAMPAYAN, STEPHEN, E.;SULLIVAN, JAMES, S.;SANDERS, DAVID, M.
发明人
CAPORASO, GEORGE, J.;SAMPAYAN, STEPHEN, E.;SULLIVAN, JAMES, S.;SANDERS, DAVID, M.